r07ds0713ej0100 rev.1.00 page 1 of 7 apr 17, 2012 target specifications datasheet RJF0604DPD silicon n channel mos fet series power switching description this fet has the over temperature shut-down capability sensin g to the junction temperature. this fet has the built-in over temperature shut-down circuit in the gate area. and this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. features ? logic level operation (4 v gate drive). ? built-in the over temperature shut-down circuit. ? high endurance capability against to the short circuit. ? latch type shut down operation (need 0 voltage recovery). ? built-in the current limitation circuit. ? power supply voltage applies 12 v and 24 v. ? for industrial applications outline renesas package code: prss0004zd-c (package name: dpak (s) ) 1 2 3 4 d s g gate resistor temperature sensing circuit latch circuit gate shut-down circuit current limitation circuit 1. gate 2. drain 3. source 4. drain absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 16 v gate to source voltage v gss ?2.5 v drain current i d note3 5 a body-drain diode reverse drain current i dr 5 a avalanche current i ap note 2 4.7 a avalanche energy e ar note 2 94.7 mj channel dissipation pch note 1 30 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. value at tc = 25 ?c 2. tch = 25 ?c, rg ? 50 ? 3. it provides by the current limitation lower bound value. r07ds0713ej0100 rev.1.00 apr 17, 2012
RJF0604DPD target specifications r07ds0713ej0100 rev.1.00 page 2 of 7 apr 17, 2012 typical operation characteristics (ta = 25c) item symbol min typ max unit test conditions v ih 3.5 ? ? v input voltage v il ? ? 1.2 v i ih1 ? ? 100 ? a vi = 8 v, v ds = 0 i ih2 ? ? 50 ? a vi = 3.5 v, v ds = 0 input current (gate non shut down) i il ? ? 1 ? a vi = 1.2 v, v ds = 0 i ih(sd)1 ? 0.8 ? ma vi = 8 v, v ds = 0 input current (gate shut down) i ih(sd)2 ? 0.35 ? ma vi = 3.5 v, v ds = 0 shut down temperature tsd ? 175 ? ? c channel temperature gate operation voltage vop 3.5 ? 12 v drain current (current limitation value) i d limt 5 ? ? a v gs = 5 v, v ds = 10 v note 4 note; 4. pulse test electrical characteristics (ta = 25c) item symbol min typ max unit test conditions i d1 ? ? 17 a v gs = 3.5 v, v ds = 10 v note 5 i d2 ? ? 10 ma v gs = 1.2 v, v ds = 10 v drain current i d3 5 ? ? a v gs = 5 v, v ds = 10 v note 5 drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 v (br)gss 16 ? ? v i g = 800 ? a, v ds = 0 gate to source breakdown voltage v (br)gss ?2.5 ? ? v i g = ?100 ? a, v ds = 0 i gss1 ? ? 100 ? a v gs = 8 v, v ds = 0 i gss2 ? ? 50 ? a v gs = 3.5 v, v ds = 0 i gss3 ? ? 1 ? a v gs = 1.2 v, v ds = 0 gate to source leak current i gss4 ? ? ?100 ? a v gs = ?2.4 v, v ds = 0 i gs(op)1 ? 0.8 ? ma v gs = 8 v, v ds = 0 input current (shut down) i gs(op)2 ? 0.35 ? ma v gs = 3.5 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 ? a v ds = 32 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.1 ? 2.1 v v ds = 10 v, i d = 1 ma forward transfer admittance |y fs | 4 9 ? s i d = 2.5 a, v ds = 10 v note 5 r ds(on) ? 58 100 m ? i d = 2.5 a, v gs = 4 v note 5 static drain to source on state resistance r ds(on) ? 42 75 m ? i d = 2.5 a, v gs = 10 v note 5 output capacitance coss ? 276 ? pf v ds = 10 v, v gs = 0, f = 1mhz turn-on delay time t d(on) ? 1.6 ? ? s rise time t r ? 4.7 ? ? s turn-off delay time t d(off) ? 3.7 ? ? s fall time t f ? 4.4 ? ? s v gs = 10 v, i d = 2.5 a, r l = 12 ? body-drain diode forward voltage v df ? 0.81 ? v i f = 5 a, v gs = 0 body-drain diode reverse recovery time t rr ? 67 ? ns i f = 5 a, v gs = 0 di f /dt = 50 a/? s t os1 ? 3.4 ? ms v gs = 5 v, v dd = 16 v over load shut down operation time note 6 t os2 ? 1.2 ? ms v gs = 5 v, v dd = 24 v notes: 5. pulse test 6. including the junction temperature rise of the over loaded condition.
RJF0604DPD target specifications r07ds0713ej0100 rev.1.00 page 3 of 7 apr 17, 2012 main characteristics 40 30 20 10 0 0 50 100 150 200 100 10 1 0.1 0.01 0.1 1 10 100 20 10 0 2 046810 v gs = 3 v 0 0 12345 5 4 3 2 1 9 v 8 v 7 v 5 v 4 v v ds = 10 v pulse test pulse test 300 200 100 0 2 046810 500 0.1 0.2 0.5 1 2 10 5 200 100 20 50 10 1.0 a i d = 2.5 a 0.5 a pulse test tc = ?40c 25c pulse test v gs = 4 v 10 v dc operation (tc = 25c) pw = 10 ms 150c 10 v channel dissipation pch (w) case temperature tc (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds (on) (mv) drain current i d (a) drain to source on state resistance r ds (on) (m ) static drain to source on state resistance vs. drain current operation in this area is limited by r ds (on) thermal shut down operation area
RJF0604DPD target specifications r07ds0713ej0100 rev.1.00 page 4 of 7 apr 17, 2012 120 100 ?50 ?25 0 25 75 100 50 150125 0 20 40 60 80 pulse test 10 v v gs = 4 v i d = 2 a, 0.5 a, 1 a i d = 2 a, 0.5 a, 1 a 100 10 1 0.1 0.1 1 10 tc = ?40c 150c v ds = 10 v pulse test 25c 0.1 1 10 100 1000 10 100 1 di / dt = 50 a / s v gs = 0, ta = 25c 010203040 60 50 10000 3000 1000 300 100 30 10 5 0 0 1 2 3 4 0.2 0.4 0.6 0.8 1.0 v gs = 5 v 100 10 1 0.1 0.2 0.5 1 2 5 0.1 pulse test t f t r t d(off) t d(on) 0 v v gs = 10 v, v dd = 30 v pw = 300 s, duty 1 % coss v gs = 0 f = 1 mhz case temperature tc (c) static drain to source on state resistance r ds (on) (m ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) forward transfer admittance vs. drain current drain current i d (a) reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage drain current i d (a) switching time t (s) switching characteristics
RJF0604DPD target specifications r07ds0713ej0100 rev.1.00 page 5 of 7 apr 17, 2012 16 12 14 10 8 4 6 2 0 100 100 m 200 180 160 140 120 0 100 24681 0 i d = 0.5 a 1 m 10 m pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25c d = 1 0.5 0.2 0.1 0.05 0.01 0.02 1shot pulse p dm pw t d = pw t ch ? c (t) = s (t) ? ch ? c ch ? c = 6.25c/w, tc = 25c 24 v v dd = 16 v gate to source voltage v gs (v) shutdown case temperature tc (c) shutdown case temperature vs. gate to source voltage gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test shutdown time of load-short test pw (s)
RJF0604DPD target specifications r07ds0713ej0100 rev.1.00 page 6 of 7 apr 17, 2012 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit waveform vin monitor d.u.t. vin 10 v 50 r l vout monitor v dd = 30 v d. u. t rg i ap monitor v ds monitor v dd 50 vin 10 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v (br)dss v (br)dss ? v dd avalanche test circuit avalanche waveform
RJF0604DPD target specifications r07ds0713ej0100 rev.1.00 page 7 of 7 apr 17, 2012 package dimensions 6.5 0.3 5.6 0.5 2.3 0.2 0.55 0.1 0 ? 0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 (1.2) 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) 1.0 max. previous code prss000 4zd- cdpa k(s) / dpak(s)v mass[typ.] 0.28g sc-63 renesas code jeita package code unit: mm package name dpak(s) ordering information orderable part number quan tity shipping container RJF0604DPD-00-j3 3000 pcs taping note: the symbol of 2nd "-" is occasionally presented as "#".
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